PRESS RELEASE
News
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PRESS RELEASE
ROCHE BOBOIS CONFIRMS ITS DIRECT POSITIONING IN CHINA AND SIGNS A SHARE PURCHASE AGREEMENT TO ACQUIRE A MAJORITY INTEREST IN ITS HISTORICAL FRANCHISEE
Roche Bobois SA acquires majority interest in its Roche Bobois franchisee in China to accelerate growth in the Asian market. Strategic transaction with significant revenue and EBITDA impact expected. French furniture brand expanding presence -
PRESS RELEASE
Worldline - Successful refinancing of Worldline’s credit lines with a new €1.125bn syndicated Revolving Credit Facility
Worldline successfully refinances credit lines with new €1.125bn RCF, extends maturity to July 2029. Transaction part of global financing strategy to manage debt maturity and strengthen liquidity -
PRESS RELEASE
Worldline - Mise en place d’une nouvelle facilité de crédit syndiquée renouvelable
Worldline annonce le succès du refinancement de ses lignes de crédit avec une nouvelle facilité de crédit syndiquée de 1,125 milliards d'euros. La transaction vise à gérer le profil de maturité de la dette et renforcer la liquidité financière -
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PRESS RELEASE
Emmi has entered into a put option agreement for Mademoiselle Desserts with the objective of strengthening its strategic premium dessert business
Emmi Management AG has entered into a put option agreement for the acquisition of Mademoiselle Desserts, aiming to enhance its premium dessert business and expand market presence. The transaction remains subject to regulatory approvals -
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PRESS RELEASE
AIXTRON reports preliminary Q2/2024 results with strong order intake. Momentum in SiC and GaN power continues. Guidance for 2024 adjusted.
AIXTRON SE reports strong Q2/2024 results with focus on SiC and GaN power. Guidance for 2024 adjusted amidst industry momentum. Full report on July 25, 2024 -
PRESS RELEASE
EQS-Adhoc: AIXTRON SE reports preliminary Q2/2024 figures and adjusts FY 2024 guidance
AIXTRON SE reports preliminary Q2/2024 figures and adjusts FY 2024 guidance. The company sees strong order intake in Q2/2024, mainly from Silicon Carbide (SiC) and Gallium Nitride (GaN) power segments
