PRESS RELEASE published on 05/15/2024 at 16:44, 1 year 11 months ago AIXTRON SE Annual General Meeting 2024 AIXTRON SE Annual General Meeting 2024 in Herzogenrath, Germany, saw approval of all resolutions by a large majority, including dividend proposal of EUR 0.40 per share Annual General Meeting Dividend Proposal Resolutions AIXTRON SE Herzogenrath
BRIEF published on 04/30/2024 at 09:08, 2 years ago AIXTRON SE Appoints New Vice President of Investor Relations Semiconductor Industry Investor Relations AIXTRON SE Corporate Appointment Christian Ludwig
BRIEF published on 04/30/2024 at 09:08, 2 years ago AIXTRON SE nomme un nouveau vice-président des relations avec les investisseurs Industrie Des Semi-conducteurs AIXTRON SE Relations Avec Les Investisseurs Rendez-vous Corporatif Christian Ludwig
PRESS RELEASE published on 04/30/2024 at 09:03, 2 years ago AIXTRON SE: Christian Ludwig appointed as new Vice President Investor Relations AIXTRON appoints Christian Ludwig as new Vice President Investor Relations. Ludwig brings extensive semiconductor industry experience to the role Semiconductor Industry Capital Markets AIXTRON Christian Ludwig Vice President Investor Relations
BRIEF published on 04/25/2024 at 07:35, 2 years ago AIXTRON SE Reports Strong Q1 Performance and SiC Market Expansion Financial Growth AIXTRON SE Q1 2024 Results Innovation Center SiC And GaN Markets
BRIEF published on 04/25/2024 at 07:35, 2 years ago AIXTRON SE annonce de solides performances au premier trimestre et une expansion du marché SiC Croissance Financière AIXTRON SE Centre D'innovation Résultats Du Premier Trimestre 2024 Marchés SiC Et GaN
PRESS RELEASE published on 04/25/2024 at 07:30, 2 years ago AIXTRON SE: Strong Q1 and growing success in SiC AIXTRON SE reports strong Q1 performance with significant revenue growth and expanding success in SiC and GaN markets, while confirming full year 2024 guidance Revenue Growth AIXTRON SE Silicon Carbide Q1 Performance Gallium Nitride
BRIEF published on 04/23/2024 at 07:35, 2 years ago Vishay Selects AIXTRON SiC Multiwafer Batch Technology for Enhanced Semiconductor Production Wafer Production Semiconductor SiC Epitaxy Power Device Manufacturing Electronic Components
BRIEF published on 04/23/2024 at 07:35, 2 years ago Vishay choisit la technologie AIXTRON SiC Multiwafer Batch pour une production améliorée de semi-conducteurs Production De Plaquettes Semi-conducteur Epitaxie SiC Fabrication D'appareils Électriques Composants Electroniques
PRESS RELEASE published on 04/23/2024 at 07:30, 2 years ago Vishay selects AIXTRON SiC multiwafer batch technology Vishay selects AIXTRON's G10-SiC epitaxy production platform for power device manufacturing, enhancing productivity and uniformity. AIXTRON and Vishay partnership aims for high-quality SiC epi production AIXTRON Semiconductor SiC Epitaxy Power Device Manufacturing Vishay
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