ROHM Introduces TSC3PAK for Enhanced SiC MOSFET Cooling

ROHM Co., Ltd. has unveiled its new TSC3PAK package for SiC MOSFETs, integrating a top-side cooling structure to improve heat dissipation. This innovation matches the performance of conventional through-hole packages like TO-247-4L while facilitating automated mounting. The technology enhances efficiency in power conversion circuits for electric vehicles.

The TSC3PAK supports an AC peak voltage of 1200 V, maintaining a long creepage distance of 6.66 mm, which is crucial in Pollution Degree 2 environments. ROHM's 4th Generation SiC MOSFETs are integrated into the package, optimizing ON resistance and switching speed to minimize power conversion losses.

Suitable for automotive and industrial applications, mass production of the TSC3PAK began in June 2026, marking a step forward in power device technology designed to boost electric vehicle performance and energy efficiency.