ROHM Semiconductor Collaborates with AIXTRON for GaN Power Production

On June 8, 2026, AIXTRON SE, a key player in semiconductor deposition equipment, announced its strategic collaboration with ROHM Semiconductor. This partnership will enable ROHM to enhance in-house gallium nitride (GaN) power device production using AIXTRON's G10-GaN platform at its Hamamatsu plant in Japan. The move will facilitate volume production of 8-inch GaN epitaxial wafers, expanding ROHM's capabilities in 650 V and 100 V power devices.

ROHM's EcoGaN™ lineup, designed for high-growth applications like AI data centers and electric vehicle powertrains, emphasizes high power density and thermal management. By internalizing GaN epitaxy, ROHM reduces dependency on external foundries, aiming for improved control over wafer quality and production timelines.

Both companies stress the collaboration's focus on process optimization and technology alignment, enhancing ROHM’s competitiveness in the fast-evolving AI and automotive markets. The GaN power device sector is projected to be worth approximately USD 3 billion by 2030, positioning ROHM for long-term success.